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| NJW21193G (PNP) NJW21194G (NPN) Preferred Devices Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features * Total Harmonic Distortion Characterized * High DC Current Gain * * * hFE = 20 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second These are Pb-Free Devices 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS MARKING DIAGRAM MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Collector Current - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5.0 400 16 30 5.0 200 1.6 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc W W/C C TO-3P CASE 340AB NJW2119xG AYWW THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA Max 0.625 40 Unit C/W C/W x G A Y WW = 3 or 4 = Pb-Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION Device NJW21193G NJW21194G Package TO-3P (Pb-Free) TO-3P (Pb-Free) Shipping 30 Units/Rail 30 Units/Rail Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2008 1 January, 2008 - Rev. 0 Publication Order Number: NJW21193/D NJW21193G (PNP) NJW21194G (NPN) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output V RMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) THD hFE unmatched hFE matched fT Cob 4 0.8 0.08 500 MHz pF % hFE 20 8 VBE(on) VCE(sat) 1.4 4 80 2.2 Vdc Vdc IS/b 4.0 2.25 Adc VCEO(sus) ICEO IEBO ICEX 250 100 100 100 Vdc mAdc mAdc mAdc Symbol Min Typ Max Unit PNP NJW21193G f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 6.5 6.0 5.5 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) 10 VCE = 10 V f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.1 TJ = 25C ftest = 1 MHz NPN NJW21194G 10 V VCE = 5 V 1.0 IC COLLECTOR CURRENT (AMPS) 10 Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 NJW21193G (PNP) NJW21194G (NPN) TYPICAL CHARACTERISTICS PNP NJW21193G 1000 1000 NPN NJW21194G hFE , DC CURRENT GAIN TJ = 100C 100 25C - 25C hFE , DC CURRENT GAIN TJ = 100C 25C 100 - 25C VCE = 20 V 10 0.1 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP NJW21193G 1000 1000 NPN NJW21194G hFE , DC CURRENT GAIN TJ = 100C 25C 100 - 25C hFE , DC CURRENT GAIN TJ = 100C 25C 100 - 25C VCE = 5 V 10 0.1 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V PNP NJW21193G 30 1.5 A I C, COLLECTOR CURRENT (A) 25 20 15 10 5.0 TJ = 25C 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 0 I C, COLLECTOR CURRENT (A) IB = 2 A 35 30 25 Figure 6. DC Current Gain, VCE = 5 V NPN NJW21194G IB = 2 A 1.5 A 1A 20 15 10 5.0 TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0.5 A 1A 0.5 A Figure 7. Typical Output Characteristics http://onsemi.com 3 Figure 8. Typical Output Characteristics NJW21193G (PNP) NJW21194G (NPN) TYPICAL CHARACTERISTICS PNP NJW21193G 3.0 SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 VCE(sat) 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0 0.1 SATURATION VOLTAGE (VOLTS) TJ = 25C IC/IB = 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VBE(sat) TJ = 25C IC/IB = 10 NPN NJW21194G VBE(sat) VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP NJW21193G VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 TJ = 25C 10 TJ = 25C NPN NJW21194G VCE = 20 V (SOLID) VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 1.0 VCE = 5 V (DASHED) 0.1 0.1 1.0 10 100 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage PNP NJW21193G 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 NPN NJW21194G 10 mSec 10 1 Sec 100 mSec 10 mSec 10 1 Sec 100 mSec 1.0 1.0 0.1 1.0 10 100 1000 VCE, COLLECTOR EMITTER (VOLTS) 0.1 1.0 10 100 1000 VCE, COLLECTOR EMITTER (VOLTS) Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area http://onsemi.com 4 NJW21193G (PNP) NJW21194G (NPN) There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10000 TC = 25C C, CAPACITANCE (pF) Cib C, CAPACITANCE (pF) 10000 TC = 25C Cib 1000 Cob f(test) = 1 MHz) 100 0.1 1.0 10 100 1000 Cob f(test) = 1 MHz) 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. NJW21193G Typical Capacitance Figure 16. NJW21194G Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 17. Typical Total Harmonic Distortion http://onsemi.com 5 NJW21193G (PNP) NJW21194G (NPN) +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER 50 W DUT 0.5 W SOURCE AMPLIFIER 0.5 W 8.0 W DUT -50 V Figure 18. Total Harmonic Distortion Test Circuit http://onsemi.com 6 NJW21193G (PNP) NJW21194G (NPN) PACKAGE DIMENSIONS TO-3P-3LD CASE 340AB-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A B C D E F G H J K L P Q U W MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20 A B 4 B Q SEATING PLANE C E U A L (3) P K 1 2 3 3X D 0.25 M AB S H J F W G G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P Box 5163, Denver, Colorado 80217 USA .O. Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NJW21193/D |
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